OF TEMPERATURE AND INPUT POWER
Millimeter wave detectors utilizing zero bias
Schottky diodes are subject to sensitivity variations as a function
of temperature and input power. In general, silicon detector sensitivity decreases at both high and low temperatures,
and also as input power increases past the "square law" detection range of the diodes. The high end of the square law
range is approximately -20 dBm.
Data showing these variations as a function of temperature and power for a silicon detector at 90 GHz are shown below.
Data showing these variations as a function of temperature and power for a GaAs detector at 20 GHz are shown below.
of temperature and input power. In general, silicon detector sensitivity decreases at both high and low temperatures,
and also as input power increases past the "square law" detection range of the diodes. The high end of the square law
range is approximately -20 dBm.
Data showing these variations as a function of temperature and power for a silicon detector at 90 GHz are shown below.
Data showing these variations as a function of temperature and power for a GaAs detector at 20 GHz are shown below.
